文献类型：期刊文献

英文题名：Tailoring the electronic properties of graphyne/blue phosphorene heterostructure via external electric field and vertical strain

作者：Wang, Yusheng[1,3,4];Song, Nahong[2,3,4];Yang, Xiaohui[1];Zhang, Jing[1];Xu, Bin[1];Li, Meng[5];Zheng, Yafeng[2];Yang, Dapeng[1]

第一作者：Wang, Yusheng

通讯作者：Wang, YS[1]

机构：[1]North China Univ Water Resources & Elect Power, Coll Phys & Elect, Zhengzhou 450046, Henan, Peoples R China;[2]Henan Univ Econ & Law, Coll Comp & Informat Engn, Zhengzhou 450000, Henan, Peoples R China;[3]Zhengzhou Univ, Int Joint Res Lab Quantum Funct Mat Henan, Zhengzhou 450001, Henan, Peoples R China;[4]Zhengzhou Univ, Sch Phys & Engn, Zhengzhou 450001, Henan, Peoples R China;[5]Zhongyuan Univ Technol, Coll Sci, Zhengzhou 450007, Henan, Peoples R China

第一机构：North China Univ Water Resources & Elect Power, Coll Phys & Elect, Zhengzhou 450046, Henan, Peoples R China

通讯机构：[1]corresponding author), North China Univ Water Resources & Elect Power, Coll Phys & Elect, Zhengzhou 450046, Henan, Peoples R China.

年份：2019

卷号：730

起止页码：277-282

外文期刊名：CHEMICAL PHYSICS LETTERS

收录：;EI(收录号：20192507058255);Scopus(收录号：2-s2.0-85067194679);WOS:【SCI-EXPANDED(收录号:WOS:000478561700043)】；

基金：The work was support by the National Natural Science Foundation of China (Grant Nos. 11404112, U1604131, 61841702), Funding scheme for young teachers in colleges and universities in Henan province (Grant No. 2017GGJS077).

语种：英文

外文关键词：Blue phosphorene; Semiconductor; Band alignment; Heterostructure

摘要：We design novel graphyne/blue phosphorene van der Waals (vdW) heterostructures (G/BP) under the external electric fields (E-field) and strains. It is demonstrated that the G/BP is a type-I semiconductor with a direct band gap of approximately 0.378 eV. The external E-field and strains not only have important effects on the band structure which undergoes a fascinating direct-indirect and semiconductor-metal transitions, but also influence the band alignment which experiences transition from type-I to type-II. In brief, the features of tunable bandgap and controllable band alignment endow G/BP with potential for application in future optoelectronic devices.