文献类型：期刊文献

中文题名：纳米非晶碳薄膜的制备及其场致电子发射特性

英文题名：Synthesis and Field Emission Characteristics of the Amorphous Nano-carbon Films

作者：袁泽明[1];张永强[1];姚宁[2];张兵临[2]

第一作者：袁泽明

通讯作者：Yuan, Z.-M.

机构：[1]河南财经政法大学计算机与信息工程学院;[2]郑州大学材料物理教育部重点实验室

第一机构：河南财经政法大学计算机与信息工程学院

通讯机构：[1]College of Computer and Information Engineering, Henan University of Economics and Law, Zhengzhou 450002, China|[1048412]河南财经政法大学计算机与信息工程学院;[10484]河南财经政法大学;

年份：2012

卷号：41

期号：6

起止页码：1768-1771

中文期刊名：人工晶体学报

外文期刊名：Journal of Synthetic Crystals

收录：CSTPCD;;EI(收录号：20130515953753);Scopus(收录号：2-s2.0-84872774169);北大核心:【北大核心2011】；CSCD:【CSCD2011_2012】；

基金：国家自然科学基金(61076041);教育部科学技术研究重点项目(205091);河南省科技攻关项目(0624250014)

语种：中文

中文关键词：纳米非晶碳;场致电子发射;FeCl3;微波等离子增强化学气相沉积

外文关键词：amorphous nano-carbon films; filed emission; FeCl3; MPECVD

摘要：采用微波等离子体增强化学气相沉积(MPECVD)法,在涂有FeCl3的硅衬底上制备出了纳米非晶碳薄膜。通过SEM、XRD和拉曼光谱分析了薄膜材料的形貌和结构。并研究了薄膜材料的场发射特性。结果表明:薄膜的开启电场仅为0.39 V/μm;当电场强度为1.85 V/μm时,电流密度高达3.06 mA/cm2;且场发射点均匀、密集、稳定。迭代法计算表明薄膜材料的功函数为3.1 eV,发射点密度约为1.7×105个/cm2。这些均表明该薄膜是一种性能优良的场发射阴极材料。
The amorphous nano-carbon films were synthesized on the crystalline silicon by microwave plasma enhanced chemical vapor deposition（MPECVD） system.The surface morphology and the structure of the films were tested by scanning electron microscopy（SEM）,Raman scattering spectroscopy and XRD.The field emission characteristics were measured.The results showed that the turn-on field was only 0.39 V/μm,the current density of 3.06 mA/cm2 was obtained when the electric field was 1.85 V/μm,and the luminous spots were symmetrical,serried and steady.The work function of the films was calculated by an iterative method,which was only 3.1 eV.The emission sites density could reach 1.7×105 cm-2.All these results indicate that the amorphous nano-carbon films are very promising for field emission applications.